Features

● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process

● Cathode is electrically connected to the case

● High reliability

● Wide beam

● Same package as BP 103, BPX 63, SFH 464, SFH 483

● DIN humidity category in acc. with DIN 40 040 GQG

Applications

● IR remote control and sound transmission

● Photointerrupters