BLUE OVAL LAMP LED

Description Lamp LEDs are effective in hot thermal and humid condition. This high brightness and weather-resistant packaging design makes these Lamp LEDs ideal for Outdoor applications such as traffic signals, variable message signs and backlighting for transparent sign panels. • Non-standoff le

INFRARED LAMP LED

CYAN LAMP LED

BLUE OVAL LAMP LED

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Infrared LAMP LED

文件：285.42 Kbytes Page：13 Pages

RED OVAL LAMP LED

文件：392.32 Kbytes Page：14 Pages

RED LAMP LED

文件：378.31 Kbytes Page：14 Pages

RED OVAL LAMP LED

文件：392.32 Kbytes Page：14 Pages

Low-Profile Analog Line Scan Camera

Description In the LC1917 analog line scan camera, PerkinElmer has combined the best features of photodiode array detection, high-speed charge-coupled scanning, and analog line scan camera technology to offer an uncompromising solution to the increasing demands of advanced imaging applications.

Low-Profile Analog Line Scan Camera

Description In the LC1917 analog line scan camera, PerkinElmer has combined the best features of photodiode array detection, high-speed charge-coupled scanning, and analog line scan camera technology to offer an uncompromising solution to the increasing demands of advanced imaging applications.

LED

LED 驱动芯片

Top View

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

PNP Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ)

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=22kΩ, R2=22kΩ)

Silicon Complementary Transistors High Voltage Video Amplifier

Description: The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers. Features: • High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA • Low Coll

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE