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型号 功能描述 生产厂家 企业 LOGO 操作
LBT-121

Photointerrupter

Features ˙Compact package based on the double-mold method. ˙High resolution (slit width = 0.5mm). ˙Gap between emitter and detector is 5.0mm. Applications ˙Floppy disk drives ˙Printers ˙Cameras

LETEX

丽太科技

LBT-121

Compact package based on the double-mold method.

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LBT-121

Photointerrupter.

LETEX

丽太科技

Photointerrupter

Features ˙Compact package based on the double-mold method. ˙High resolution (slit width = 0.6mm). ˙Gap between emitter and detector is 5.0mm. Applications ˙Floppy disk drives ˙Printers ˙Cameras

LETEX

丽太科技

Photointerrupter

Features ˙High sensing accuracy (Slit width: 0.5 mm) ˙PWB direct mounting type package Applications ˙Copiers, printers, facsimiles ˙Optoelectronic switches

LETEX

丽太科技

光遮断器

光遮断器是一种可转换的部件,其利用光的信号和电的讯号彼此进行转换。将一对发射和接收元件插入一个套件中组装而成的。光遮断器也是一种机械式零件,其可侦测物件是否存在、亦或在附近、或者穿插。 ˙Compact package based on the double-mold method.\n\n˙High resolution\n\n˙Gap between emitter and detector is 3 - 16mm.;

LETEX

丽太科技

光遮断器(光电开关)

LETEX

丽太科技

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

MOSEL

茂矽电子

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

NTE

POWER TRANSISTORS(5.0A,60-100V,65W)

designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board

PANASONIC

松下

LBT-121产品属性

  • 类型

    描述

  • IR VR=5V μA(Max.):

    10

  • Iceo Vce=20V IF=0V nA(Max.):

    100

  • Ic IF=20mA Vce=5V mA(Min.):

    0.5

  • V(sat) IF=20mA IC=1mA V(Max.):

    0.4

LBT-121数据表相关新闻