| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
LBT-121 | Photointerrupter Features ˙Compact package based on the double-mold method. ˙High resolution (slit width = 0.5mm). ˙Gap between emitter and detector is 5.0mm. Applications ˙Floppy disk drives ˙Printers ˙Cameras | LETEX 丽太科技 | ||
LBT-121 | Compact package based on the double-mold method. 文件:155.4 Kbytes Page:3 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
LBT-121 | Photointerrupter. | LETEX 丽太科技 | ||
Photointerrupter Features ˙Compact package based on the double-mold method. ˙High resolution (slit width = 0.6mm). ˙Gap between emitter and detector is 5.0mm. Applications ˙Floppy disk drives ˙Printers ˙Cameras | LETEX 丽太科技 | |||
Photointerrupter Features ˙High sensing accuracy (Slit width: 0.5 mm) ˙PWB direct mounting type package Applications ˙Copiers, printers, facsimiles ˙Optoelectronic switches | LETEX 丽太科技 | |||
光遮断器 光遮断器是一种可转换的部件,其利用光的信号和电的讯号彼此进行转换。将一对发射和接收元件插入一个套件中组装而成的。光遮断器也是一种机械式零件,其可侦测物件是否存在、亦或在附近、或者穿插。 ˙Compact package based on the double-mold method.\n\n˙High resolution\n\n˙Gap between emitter and detector is 3 - 16mm.; | LETEX 丽太科技 | |||
光遮断器(光电开关) | LETEX 丽太科技 | |||
Recording Writer for MSSI121 Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo | MOSEL 茂矽电子 | |||
Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. | NTE | |||
POWER TRANSISTORS(5.0A,60-100V,65W) designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll | MOSPEC 统懋 | |||
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12 | MOTOROLA 摩托罗拉 | |||
Silicon NPN epitaxial planer transistor Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board | PANASONIC 松下 |
LBT-121产品属性
- 类型
描述
- IR VR=5V μA(Max.):
10
- Iceo Vce=20V IF=0V nA(Max.):
100
- Ic IF=20mA Vce=5V mA(Min.):
0.5
- V(sat) IF=20mA IC=1mA V(Max.):
0.4
LBT-121芯片相关品牌
LBT-121规格书下载地址
LBT-121参数引脚图相关
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LBT-121数据表相关新闻
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DdatasheetPDF页码索引
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