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LBC858

General Purpose Transistors PNP Silicon

文件:148.17 Kbytes Page:7 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Le

LRC

乐山无线电

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requir

LRC

乐山无线电

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requir

LRC

乐山无线电

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Le

LRC

乐山无线电

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requir

LRC

乐山无线电

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features Pb-Free Package May be Available. The G.Suffix Denotes a Pb-Free Le

LRC

乐山无线电

General Purpose Transistors PNP Silicon

General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. Features We declare that the material of product compliance with RoHS requir

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:148.17 Kbytes Page:7 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:148.17 Kbytes Page:7 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:146.52 Kbytes Page:7 Pages

LRC

乐山无线电

丝印代码:3J;General Purpose Transistors PNP Silicon

文件:666.6 Kbytes Page:7 Pages

LEIDITECH

雷卯电子

General Purpose Transistors

文件:164.02 Kbytes Page:7 Pages

LRC

乐山无线电

Dual General Purpose Transistors

文件:247.95 Kbytes Page:6 Pages

LRC

乐山无线电

Dual General Purpose Transistors

文件:134.71 Kbytes Page:6 Pages

LRC

乐山无线电

丝印代码:3G;S- Prefix for Automotive and Other Applications Requiring Unique Site

文件:462.3 Kbytes Page:6 Pages

LEIDITECH

雷卯电子

通用三极管

LRC

乐山无线电

Dual General Purpose Transistors

文件:182.35 Kbytes Page:6 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:148.17 Kbytes Page:7 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:148.17 Kbytes Page:7 Pages

LRC

乐山无线电

丝印代码:3K;General Purpose Transistors PNP Silicon

文件:666.6 Kbytes Page:7 Pages

LEIDITECH

雷卯电子

General Purpose Transistors PNP Silicon

文件:146.52 Kbytes Page:7 Pages

LRC

乐山无线电

通用三极管

LRC

乐山无线电

General Purpose Transistors

文件:164.03 Kbytes Page:7 Pages

LRC

乐山无线电

丝印代码:3K;General Purpose Transistors PNP Silicon

文件:666.6 Kbytes Page:7 Pages

LEIDITECH

雷卯电子

General Purpose Transistors PNP Silicon

文件:146.52 Kbytes Page:7 Pages

LRC

乐山无线电

通用三极管

LRC

乐山无线电

General Purpose Transistors

文件:284.09 Kbytes Page:6 Pages

LRC

乐山无线电

Dual General Purpose Transistors

文件:247.95 Kbytes Page:6 Pages

LRC

乐山无线电

Dual General Purpose Transistors

文件:134.71 Kbytes Page:6 Pages

LRC

乐山无线电

丝印代码:3K;S- Prefix for Automotive and Other Applications Requiring Unique Site

文件:462.3 Kbytes Page:6 Pages

LEIDITECH

雷卯电子

Dual General Purpose Transistors

文件:184.48 Kbytes Page:6 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:148.17 Kbytes Page:7 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:148.17 Kbytes Page:7 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:146.52 Kbytes Page:7 Pages

LRC

乐山无线电

丝印代码:3L;General Purpose Transistors PNP Silicon

文件:666.6 Kbytes Page:7 Pages

LEIDITECH

雷卯电子

General Purpose Transistors

文件:164.44 Kbytes Page:7 Pages

LRC

乐山无线电

General Purpose Transistors PNP Silicon

文件:146.52 Kbytes Page:7 Pages

LRC

乐山无线电

PNP general purpose transistors

DESCRIPTION PNP transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complements: BC846F, BC847F and BC848F series. FEATURES • Power dissipation comparable to SOT23 • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching

PHILIPS

飞利浦

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

MOTOROLA

摩托罗拉

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.

MOTOROLA

摩托罗拉

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

NTE

Integrated Circuit Dual, Low-Noise JFET-Input Operational Amplifier

Description: The NTE858M and NTE858SM are dual, low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for lo

NTE

LBC858产品属性

  • 类型

    描述

  • IC (mA):

    100

  • VCEO (V):

    30

  • hFE Min:

    125

  • hFE @IC(mA):

    2

  • VCE(sat) Max (V):

    0.65

  • VCE(sat) @IC/IB(mA):

    100/5

  • fT TYP (MHz):

    100

  • Polarity:

    PNP

  • Package:

    SOT-23

更新时间:2026-8-3 18:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
只做原装正品
LRC/乐山
13+
SOT363
60000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
LRC/乐山
2223+
SOT-23
26800
只做原装正品假一赔十为客户做到零风险
LRC
2450+
SOT23
9485
只做原厂原装正品终端客户免费申请样品
LRC
25+
3000
全新原装!优势库存热卖中!
LRC/乐山
25+
SOT-23
880000
明嘉莱只做原装正品现货
LRC/乐山
21+
SOT23
20000
百域芯优势分销LRC 实单必成可开增值税
LRC
25+
SOT-363
96000
公司大量原装现货,欢迎来电
LRC
2023+
SOT-363
50000
原装现货
LRC/乐山
25+
SOT-363
18000
原装正品 有挂有货 假一赔十

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