Single Pole OptoMOS Relays

Description LBA126L is a Dual 1 Form-A solid state relay that has two independently controlled optically coupled MOSFETs with an additional current limiting circuit. The efficient MOSFET switches and photovoltaic die use Clare’s patented OptoMOS architecture to provide 3750 VRMS of input to outpu

Dual Single-Pole OptoMOS Relay

文件：107.7 Kbytes Page：5 Pages

封装/外壳：8-SMD（0.300"，7.62mm） 包装：管件 描述：RELAY SPST-NO/NC 150MA 0-250V 继电器 固态继电器

封装/外壳：8-SMD（0.300"，7.62mm） 包装：管件 描述：RELAY SPST-NO/NC 150MA 0-250V 继电器 固态继电器

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switc

Germanium Mesa Transistor, PNP, for High-Speed Switching Applications

Germanium Mesa Transistor, PNP, for High–Speed Switching Applications

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN Phototransistor

文件：45.28 Kbytes Page：2 Pages