EPITAXIAL PLANAR PNP TRANSISTOR (HIGH POWER AMPLIFIER)

HIGH POWER AMPLIFIER APPLICATION. FEATURES • Complementary to KTC4512. • Recommended for 30Wᴕ35W Audio Frequency Amplifier Output Stage.

EPITAXIAL PLANAR PNP TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION.FEATURES\n• Complementary to KTC4512.\n• Recommended for 30Wᴕ35W Audio Frequency Amplifier Output Stage. • Complementary to KTC4512.\n• Recommended for 30Wᴕ35W Audio Frequency Amplifier Output Stage.;

Multiplier IC for Displays

Description The CXA1726AM/AS is a multiplier IC which is used for dynamic convergence, dynamic focus and others in CRT display monitors and projectors. It is used in conjunction with an IC (CXA1470AM/AS) which generates waveforms for deflection compensation. Features • Analog multiplier 4c

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMIT

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

Isolated Drive Transmitter

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