EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. • Complementary to KTC2016.

EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : VCEO=-100V. • Low Collector-Emitter Saturation Voltage. : V CE(sat)=-2.0V(Max.) • Complementary to KTC2018.

PNP Transistors

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PNP Transistors

文件：1.48373 Mbytes Page：2 Pages

PNP Transistors

文件：1.48373 Mbytes Page：2 Pages

PNP Transistors

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PNP Transistors

文件：1.13408 Mbytes Page：2 Pages

PNP Transistors

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D챕tails complets sur le site du fabricant:

IDEAL # 103 (103) Description du produit Détails complets sur le site du fabricant: IDEAL INDUSTRIES, INC

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

Smooth, high torque, roller ratchet handle

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