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KSE801晶体管资料
KSE801别名：KSE801三极管、KSE801晶体管、KSE801晶体三极管
KSE801生产厂家：
KSE801制作材料：Si-P+Darl+Di
KSE801性质：
KSE801封装形式：直插封装
KSE801极限工作电压：60V
KSE801最大电流允许值：4A
KSE801最大工作频率：<1MHZ或未知
KSE801引脚数：3
KSE801最大耗散功率：40W
KSE801放大倍数：
KSE801图片代号：B-21
KSE801vtest：60
KSE801htest：999900
- KSE801atest：4
KSE801wtest：40
KSE801代换 KSE801用什么型号代替：MJE801,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KSE801 | NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Monolithic Construction With Built-in Base-Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 | FAIRCHILD 仙童半导体 |   | |
KSE801 | Monolithic Construction With Built-in Base-Emitter Resistors 文件：55.66 Kbytes Page：4 Pages | FAIRCHILD 仙童半导体 | | |
封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN DARL 60V 4A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Plastic High Power Silicon NPN Transistor Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802 | MOTOROLA 摩托罗拉 | | ||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | | ||
Integrated Circuit FM Stereo Demodulator Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin | NTE | | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead | NEC 瑞萨 | | ||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead | NEC 瑞萨 | |
KSE801产品属性
- 类型
描述
- 型号
KSE801
- 制造商
FAIRCHILD
- 制造商全称
Fairchild Semiconductor
- 功能描述
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TO-126-3 |
7734 |
样件支持,可原厂排单订货! |
|||
onsemi |
25+ |
TO-126-3 |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
三星 |
24+ |
TO-126 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
FAIRCHILD/仙童 |
20+PB |
TO-126 |
20000 |
20+PB |
|||
三星 |
22+ |
TO-126 |
20000 |
公司只做原装 品质保障 |
|||
三星 |
23+ |
TO-126 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
三星 |
97+ |
TO-126 |
4553 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
22+ |
TO-126 |
6000 |
十年配单,只做原装 |
|||
三星 |
23+ |
TO-126 |
50000 |
全新原装正品现货,支持订货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-220F |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
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KSE801规格书下载地址
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DdatasheetPDF页码索引
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