General Purpose Power Switching Applications

General Purpose Power Switching Applications • Low Collector-Emitter Saturation Voltage: VCE(sat) = -1V (MAX)@-8A • Fast Switching Speeds • Complement to KSE44H

isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -80V(Min) ·High DC Current Gain : hFE= 60(Min)@ (VCE= -1V, IC= -2A) ·Low Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -8A, IB= -0.4A) ·Complement to Type KSE44H11 ·Minimum Lot-to-Lot variations for robust device performance

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 80V 10A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-220-3 包装：管件 描述：TRANS PNP 80V 10A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

General Purpose Power Switching Applications

文件：46.34 Kbytes Page：4 Pages

COMPLEMENTARY SILICON

DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power amplifier applications.

Complementary Power Transistors

文件：97.32 Kbytes Page：9 Pages

SILICON PLASTIC POWER TRANSISTORS

文件：108.31 Kbytes Page：4 Pages

SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTORS

文件：425.42 Kbytes Page：2 Pages

SILICON PLANAR POWER TRANSISTORS

文件：213.89 Kbytes Page：4 Pages