Power Amplifier Applications

Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Built in a Damper Diode at E-C • Darlington TR • Complement to KSB907

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 40V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 2A · Complement to KSB907 APPLICATIONS · Low frequency amplifier

Power Amplifier Applications

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS NPN DARL 40V 3A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ROTARY MOTION | PRECISION SENSOR

Features • Servo Mount / Ball Bearing • 7/8” TO 3” Diameter Servo Mount • Conductive Plastic Single-turn Precision Potentiometers

Customer Specification

Construction 1) Conductor a) Material Tinned Copper, per ASTM B-33 and CID-A-A-59551, latest revision b) Stranding Solid 2) Braid Data a) Nominal Dimensions .031 x .020 Inches b) AWG of Ends 36 c) Number of Carriers 16 d) Nominal Percent Coverage N/A e) Total Number of Ends 16 f) Approx.

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

9V SUPER HEAVY DUTY

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500/10 31 GW

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