Low Frequency Power Amplifier

Low Frequency Power Amplifier • Low Collector-Emitter Saturation Voltage • Complement to KSB906

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 60V(Min) · Collector-Emitter Saturation Voltage -VCE(sat) : = 1.7V(Max) @IC= 3A · Complement to KSB906 APPLICATIONS · Low frequency amplifier

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 40V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= 1.5V(Max) @IC= 2A · Complement to KSB907 APPLICATIONS · Low frequency amplifier

Power Amplifier Applications

Power Amplifier Applications • High DC Current Gain • Low Collector-Emitter Saturation Voltage • Built in a Damper Diode at E-C • Darlington TR • Complement to KSB907

Low Frequency Power Amplifier

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS NPN 60V 3A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：管件 描述：TRANS NPN 60V 3A IPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Power Amplifier Applications

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FEATURES • Gangable up to 6 sections • Extra taps on request • Bushing or servo mount types available • Ohmic value range: 5  up to 100 k • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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