EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of Parts and Manufacturing Process. ● High Packing Density.

Complex BRT, TES6, 20V, 0.05A

SOFT RECOVERU, FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 3.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Void-free molded plastic package • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • In

FAST RECOVERY RECTIFIER DIODE

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diode very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

FAST RECOVERY RECTIFIER DIODES

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

REGULATED GaAs FET BIAS SUPPLY

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