Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

文件：281 Kbytes Page：8 Pages

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broad band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition t

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

文件：281 Kbytes Page：8 Pages

Silicon NPN Planar RF Transistor

文件：86.98 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor

文件：86.98 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

文件：281 Kbytes Page：8 Pages

(46 mm) Three Turn Wirewound Upper Grade Precision Potentiometer

FEATURES • Large range of ohmic values: 15 Ω to 50 kΩ • Bushing mount, servo mount and screw mount version • Gangable up to 3 sections • Extra taps available upon request

0.8 廓 CMOS, 2.3 V to 5.5 V, SPDT/2:1 Mux Mini LFCSP

GENERAL DESCRIPTION The ADG852 is a low voltage CMOS single-pole, double-throw (SPDT) switch. This device offers ultralow on resistance of less than 1 Ω over the full temperature range. The ADG852 is fully specified for 5.5 V and 3.3 V supply operation. FEATURES 0.8 Ω typical on resistance

PC Mount, Shocksafe 5x20mm Fuses

文件：80.27 Kbytes Page：1 Pages

14-Bit, 65MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：63.32 Kbytes Page：5 Pages

14-Bit, 65MHz Sampling ANALOG-TO-DIGITAL CONVERTER

文件：63.32 Kbytes Page：5 Pages