Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

文件：281 Kbytes Page：8 Pages

Silicon NPN Planar RF Transistor

Description The main purpose of this bipolar transistor is broad band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition t

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

Features • Low supply voltage • Low current consumption • 50 Ω input impedance at 945 MHz • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers a

Silicon NPN Planar RF Transistor

文件：281 Kbytes Page：8 Pages

Silicon NPN Planar RF Transistor

Silicon NPN Planar RF Transistor

文件：86.98 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

文件：86.98 Kbytes Page：5 Pages

Silicon NPN Planar RF Transistor

文件：281 Kbytes Page：8 Pages

SOFT RECOVERU, FAST SWITCHING PLASTIC RECTIFIER(VOLTAGE - 50 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 3.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Void-free molded plastic package • Exceeds environmental standards of MIL-S-19500/228 • Fast switching for high efficiency. • In

FAST RECOVERY RECTIFIER DIODE

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diode very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

FAST RECOVERY RECTIFIER DIODES

DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast recovery rectifier diodes very attractive components for many demanding applications. ■ LOW FORWARD VOLTAGE DROP ■ HIGH SURGE CURRENT CAPABILITY APPLICATIONS ■ AC-DC POWER SUPPLIES AND

REGULATED GaAs FET BIAS SUPPLY

文件：75.43 Kbytes Page：7 Pages