EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. • High Packing Density.

General Purpose BRT, USM, 50V, 0.1A

SEMICONDUCTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. • High Packing Density.

SEMICONDUCTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process. • High Packing Density.

General Purpose BRT, ESM, 50V, 0.1A

General Purpose BRT, VSM, 50V, 0.1A

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Heavy-Duty Hydra-Lift Karriers

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Celeron M Processor on 65 nm Process

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Detectable Buried Barricade Tapes 400 Series

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