EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.

General Purpose BRT, VSM, 50V, 0.1A

• With Built-in bias resistors\n• Simplify circuit design.\n• Reduce a quantity of Parts and Manufacturing Process;

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A • Packaged in Compact JEDEC TO–220AB

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages