N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, I

isc N-Channel MOSFET Transistor

• DESCRITION • Suitable for active power factor correction and switching mode Power supplies • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.58Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perfor

N CHANNEL MOS FIELD EFFECT TRANSISTOR

isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件：217.21 Kbytes Page：8 Pages

N-CHANNEL POWER MOSFET

文件：473.72 Kbytes Page：7 Pages

8A 600V N-channel Enhancement Mode Power MOSFET

文件：879.04 Kbytes Page：12 Pages