位置：首页 > IC中文资料第5717页 > KM416V1204
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 |   | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT 文件：2.07 Mbytes Page：31 Pages | Samsung 三星 | | ||
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT | Samsung 三星 | |
KM416V1204产品属性
- 类型
描述
- 型号
KM416V1204
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC/SAMSUNG |
23+ |
OJ |
1299 |
全新原装正品现货,支持订货 |
|||
SEC |
2025+ |
TSSOP |
5000 |
原装进口价格优 请找坤融电子! |
|||
SAMSUNG/三星 |
23+ |
TSOP44 |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
N/A |
25+ |
TSOP |
2500 |
强调现货,随时查询! |
|||
N/A |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG |
23+ |
TSOP |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
SAM |
1923+ |
SOJ42 |
12008 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SAMSUNG/三星 |
23+ |
TSOP |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG |
26+ |
TSOP |
360000 |
原装现货 |
KM416V1204规格书下载地址
KM416V1204参数引脚图相关
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DdatasheetPDF页码索引
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