位置：首页 > IC中文资料第5717页 > KM416V1204C
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KM416V1204C | 1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 |   | |
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -5 o | Samsung 三星 | | ||
1M x 16BIT CMOS DYNAMIT RAM WITH EXTENDED DATA OUT 文件：2.07 Mbytes Page：31 Pages | Samsung 三星 | |
KM416V1204C产品属性
- 类型
描述
- 型号
KM416V1204C
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
sam |
25+ |
500000 |
行业低价,代理渠道 |
||||
SAMSUNG/三星 |
23+ |
TSSOP |
89630 |
当天发货全新原装现货 |
|||
SAMSUNG |
23+ |
TSOP |
8560 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG/三星 |
22+ |
TSOP44 |
100000 |
代理渠道/只做原装/可含税 |
|||
SAMSUNG |
98+ |
TSOP |
3560 |
全新原装进口自己库存优势 |
|||
SAMSUNG |
24+ |
SOJ42 |
100 |
原装现货假一罚十 |
|||
SAMSUNG/三星 |
24+ |
NA/ |
371 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SAMSUNG |
23+ |
TSOP |
20000 |
全新原装假一赔十 |
|||
SAMSUNC |
TSOP44 |
42 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
||||
SAMSUNG/三星 |
25+ |
TSOP44 |
54658 |
百分百原装现货 实单必成 |
KM416V1204C规格书下载地址
KM416V1204C参数引脚图相关
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DdatasheetPDF页码索引
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