型号 功能描述 生产厂家 企业 LOGO 操作
KM41464AJ

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

Samsung

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

Samsung

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

Samsung

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

Samsung

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

Samsung

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

Samsung

三星

DYNAMIC NMOS RAM

65,536 x 4-Bit Dynamic NMOS RAM

NEC

瑞萨

KM41464AJ产品属性

  • 类型

    描述

  • 型号

    KM41464AJ

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

更新时间:2025-10-31 16:22:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
09+
DIP18
21
一级代理,专注军工、汽车、医疗、工业、新能源、电力
KM4164A-15
25+
7
7
SAMSUNG
25+
DIP
18000
原厂直接发货进口原装
SAM
6000
面议
19
PLCC
KOREA
25+
SOP
3200
绝对原装自家现货!真实库存!欢迎来电!
SAM
25+
DIP18
3629
原装优势!房间现货!欢迎来电!
SAMSUNG/三星
原厂封装
9800
原装进口公司现货假一赔百
SEC
25+
DIP18
4500
全新原装、诚信经营、公司现货销售
A
24+
b
100
SAMSUNG
22+
DIP16
8000
原装正品支持实单

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