型号 功能描述 生产厂家 企业 LOGO 操作
KM41464AZ

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

SAMSUNG

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

SAMSUNG

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

SAMSUNG

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

SAMSUNG

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

SAMSUNG

三星

64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

GENERAL DESCRIPTION The KM41464A is a fully decoded 65,536 x 4 NMOS Dynamic Random Access Memory. The design is optimized for high speed, high performance applications such as computer memory, buffer memory, peripheral storage and environments where low power dissipation and compact layout are re

SAMSUNG

三星

DYNAMIC NMOS RAM

65,536 x 4-Bit Dynamic NMOS RAM

NEC

瑞萨

KM41464AZ产品属性

  • 类型

    描述

  • 型号

    KM41464AZ

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    64K X 4 BIT DYNAMIC RAM WITH PAGE MODE

更新时间:2026-3-2 23:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
9447+
PDIP
750
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
2026+
DIP
54648
百分百原装现货 实单必成 欢迎询价
SAMSUNG/三星
24+
DIP
990000
明嘉莱只做原装正品现货
SAM
24+/25+
634
原装正品现货库存价优
SAMSUNG/三星
16+
DIP16
25
SAMSUNG/三星
2026+
DIP
12500
全新原装正品,本司专业配单,大单小单都配
KM4164A-15
25+
7
7
SAMSUNG
DIP-16
68500
一级代理 原装正品假一罚十价格优势长期供货
25+
108
百分百原装正品 真实公司现货库存 本公司只做原装 可
SAMSUNG
22+
DIP16
8000
原装正品支持实单

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