N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 500V, ID= 9A

Planar MOSFETs, TO-220IS(1), 500V, 9A

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

Fast Switching Speed

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9A, 500V N-CHANNEL POWER MOSFET

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N-Channel 650V (D-S) Power MOSFET

文件：1.10594 Mbytes Page：10 Pages

9A 500V N-channel enhanced field effect transistor

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