N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies. FEATURES · VDSS= 250V, ID= 7.5A · Dra

N CHANNEL MOS FIELD EFFECT TRANSISTOR

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Planar MOSFETs, DPAK(1), 250V, 7.5A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：387.96 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 250V, 8.1A, RDS(ON) = 450mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 250V, 8.1A, RDS(ON) = 450mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-220 & TO-263 package.

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 9.4A, 250V, RDS(on) = 0.42Ω @VGS = 10 V • Low gate charge ( typical 15.5 nC) • Low Crss ( typical 15 pF) • Fast switching

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with

N-Channel Power MOSFET

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