N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 5A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS(Min.)= 600V, ID= 6A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：488.18 Kbytes Page：6 Pages

Planar MOSFETs, TO-220IS(1), 600V, 6A

N CHANNEL MOS FIELD EFFECT TRANSISTOR

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件：1.22672 Mbytes Page：7 Pages

Avalanche Energy Specified

DESCRITION · Designed for high efficiency switch mode power supply. FEATURES · Drain Current –ID= 6A@ TC=25℃ · Drain Source Voltage-: VDSS= 600V(Min) · Static Drain-Source On-Resistance : RDS(on) = 1.2Ω (Max) · Avalanche Energy Specified · Fast Switching · Simple Drive Requirements

6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

 DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

N-Channel 600V (D-S) Power MOSFET

文件：1.0803 Mbytes Page：9 Pages

N-CHANNEL POWER MOSFET

文件：460.3 Kbytes Page：6 Pages

N-Channel Power MOSFET

文件：486.21 Kbytes Page：10 Pages