N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS= 800V, ID= 2.7A • Drain-S

Planar MOSFETs, IPAK(1), 800V, 2.7A

2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

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3 Amps, 800 Volts N-CHANNEL POWER MOSFET

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Fast Switching

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N-Channel Power MOSFET

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