型号 功能描述 生产厂家 企业 LOGO 操作
KF3N80D

N CHANNEL MOS FIELD

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS= 800V, ID= 2.7A • Drain-S

KEC

KEC(Korea Electronics)

KF3N80D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS= 800V, ID= 2.7A • Drain-S

KEC

KEC(Korea Electronics)

KF3N80D

Planar MOSFETs, DPAK(1), 800V, 2.7A

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS= 800V, ID= 2.7A • Drain-S

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS= 800V, ID= 2.7A • Drain-S

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS= 800V, ID= 2.7A • Drain-S

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

文件:394.03 Kbytes Page:6 Pages

KEC

KEC(Korea Electronics)

2.5 Amps, 800 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)=3.8Ω@VGS=10 V * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer

UTC

友顺

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:210.29 Kbytes Page:6 Pages

UTC

友顺

3 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:222.92 Kbytes Page:6 Pages

UTC

友顺

Fast Switching

文件:49.87 Kbytes Page:2 Pages

ISC

无锡固电

N-Channel Power MOSFET

文件:398.32 Kbytes Page:8 Pages

NELLSEMI

尼尔半导体

更新时间:2025-12-25 17:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
KEC
24+
ROHSPBFREE
990000
明嘉莱只做原装正品现货
KEC/开益禧
25+
TO-252
20300
KEC/开益禧原装特价KF3N80D即刻询购立享优惠#长期有货
KEC
24+
DPAK(1)
35400
KEC稳定渠道,全系列在售
KEC
23+
DPAK(1)
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
KEC
24+
TO-220F
9000
只做原装,欢迎询价,量大价优
KEC
23+
NA
2860
原装正品代理渠道价格优势
24+
8866
KEC
23+
TO-220
8000
只做原装现货
K
22+
TO-252
6000
十年配单,只做原装
KEC
24+
TO-220F
60000

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