N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D

Planar MOSFETs, IPAK(2), 600V, 2.3A

3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app

Fast Switching

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N-Channel 650 V (D-S) MOSFET

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3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

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N-Channel Power MOSFET

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