位置：首页 > IC中文资料第11419页 > KF3N60D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
KF3N60D | N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D | KEC KEC(Korea Electronics) |   | |
KF3N60D | N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D | KEC KEC(Korea Electronics) | | |
KF3N60D | Power MOSFET FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC | VBSEMI 微碧半导体 | | |
KF3N60D | Planar MOSFETs, DPAK(1), 600V, 2.3A | KEC KEC(Korea Electronics) | | |
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D | KEC KEC(Korea Electronics) | | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D | KEC KEC(Korea Electronics) | | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES • VDSS= 600V, ID= 2.3A • D | KEC KEC(Korea Electronics) | | ||
N CHANNEL MOS FIELD EFFECT TRANSISTOR 文件：1.01371 Mbytes Page：7 Pages | KEC KEC(Korea Electronics) | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching app | UTC 友顺 | | ||
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 文件：363.66 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel Power MOSFET 文件：442.29 Kbytes Page：9 Pages | NELLSEMI 尼尔半导体 | | ||
Fast Switching 文件：49.9 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 650 V (D-S) MOSFET 文件：1.08665 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | |
KF3N60D产品属性
- 类型
描述
- 型号
KF3N60D
- 制造商
KEC
- 制造商全称
KEC(Korea Electronics)
- 功能描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KEC |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
KEC |
23+ |
NA |
2860 |
原装正品代理渠道价格优势 |
|||
KEC |
24+ |
DPAK(1) |
35400 |
KEC稳定渠道,全系列在售 |
|||
KEC |
23+ |
TO-220IS(1) |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
KEC |
23+ |
SOT252 |
8000 |
只做原装现货 |
|||
KEC |
2022+ |
SOT252 |
32000 |
原厂代理 终端免费提供样品 |
|||
KEC |
25+ |
TO-251 |
2725 |
就找我吧!--邀您体验愉快问购元件! |
|||
KEC |
24+ |
TO-252 |
60000 |
||||
KEC |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
KEC |
21+ |
TO-251 |
10000 |
原装现货假一罚十 |
KF3N60D规格书下载地址
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2019-11-19
DdatasheetPDF页码索引
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