N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES

N CHANNEL MOS FIELD EFFECT TRANSISTOR

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

3 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：173.79 Kbytes Page：6 Pages

3A, 500V N-CHANNEL POWER MOSFET

文件：181.85 Kbytes Page：6 Pages