N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS(Min.)= 400V, ID= 2.2A • D

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES • VDSS(Min.)= 400V, ID= 2.2A • D

Planar MOSFETs, IPAK(1), 400V, 2.2A

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 2.6Ω (Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters motor drivers and relay drivers

3A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件：211.42 Kbytes Page：6 Pages

N-CHANNEL POWER MOSFET

文件：228.97 Kbytes Page：7 Pages

N-CHANNEL POWER MOSFET

文件：228.97 Kbytes Page：7 Pages