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型号 功能描述 生产厂家&企业 LOGO 操作
3N40

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 2.6Ω (Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters motor drivers and relay drivers

ISC

无锡固电

3N40

3A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

UTC

友顺

isc N-Channel MOSFET Transistor

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 2.6Ω (Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters motor drivers and relay drivers

ISC

无锡固电

3A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

UTC

友顺

3A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

UTC

友顺

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N40K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy p

UTC

友顺

3A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

UTC

友顺

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

VBSEMI

微碧半导体

3A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 3N40 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件:211.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件:211.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件:211.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件:211.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:228.97 Kbytes Page:7 Pages

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件:211.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件:211.42 Kbytes Page:6 Pages

UTC

友顺

N-CHANNEL MOSFET FOR HIGH SPEED SWITCHING

文件:211.42 Kbytes Page:6 Pages

UTC

友顺

更新时间:2025-8-9 17:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VBsemi
21+
TO251
10026
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
24+
TO-220F
50000
全新原装,一手货源,全场热卖!
UTC/友顺
23+
TO-220F
6800
专注配单,只做原装进口现货
VBsemi
24+
TO251
9000
只做原装正品 有挂有货 假一赔十
ST
23+
SOT223
16900
正规渠道,只有原装!
ST/意法
23+
SOT-223
8900
原厂授权代理,海外优势订货渠道。可提供大量库存,详
ST/意法
23+
SOT223
7000
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
UTC/友顺
2022+
TO-220
7500
原厂代理 终端免费提供样品
MDI
23+
TO251
50000
全新原装正品现货,支持订货

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