SILICON EPITAXIAL PLANAR DIODE

ANTENNA TUNNING APPLICATION FEATURES • Low Tuning Voltage : VT=3V. • High Capacitance Ratio : C0.5V/C3V=3.5(Min.) • Excellent C-V Characteristics, and Small Tracking Error.

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE

ANTENNA TUNNING APPLICATIONFEATURES\n• Low Tuning Voltage : VT=3V.\n• High Capacitance Ratio : C0.5V/C3V=3.5(Min.)\n• Excellent C-V Characteristics, and Small Tracking Error. • Low Tuning Voltage : VT=3V.\n• High Capacitance Ratio : C0.5V/C3V=3.5(Min.)\n• Excellent C-V Characteristics, and Small Tracking Error.;

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

POWER TRANSISTORS(3A,40W)