SILICON EPITAXIAL PIN TYPE DIODE(VHF-UHF BAND RF ATTENUATOR , AGC FOR AM/FM TUNER)

VHF∼UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. FEATURES • Low Capacitance : CT=0.25[pF] (Typ.) • Low Series resistance : rS=7[Ω ] (Typ.). • Designed for low Inter Modulation. • Small Package : USC.

PIN Diode, USC, 50V, 50mA

• Low Capacitance : CT=0.25[pF] (typ.) \n• Low Series Resistance : rs=7[ohm] (typ.)\n• Designed for Low Inter Modulation\n• Small Package : USC.;

USC PACKAGE

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SILICON EPITAXIAL PIN TYPE DIODE

VHF∼UHF BAND RF ATTENUATOR APPLICATIONS. AGC FOR AM/FM TUNER. FEATURES • Low Capacitance : CT=0.25[pF] (Typ.) • Low Series resistance : rS=7[Ω ] (Typ.). • Designed for low Inter Modulation. • Small Package : ESC.

ESC VHF/UHF Band Attenuator Diode 50V 50mA 0.25(Typ)Pf 7

. Low Capacitance : CT=0.25[pF] (typ.). Low Series Resistance : rs=7[ohm] (typ.) Designed for Low Inter Modulation Small Package : ESC.;

USC PACKAGE

文件：349.62 Kbytes Page：1 Pages

SILICON EPITAXIAL PIN TYPE DIODE

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SILICON EPITAXIAL PIN TYPE DIODE

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N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL MOS BROADBAND RF POWER FETs

The RF MOSFET Line RF Power ​​​​​​​Field-Effect Transistors N–Channel Enhancement–Mode Designedfor broadband commercial and military applications using push pull circuitsat frequencies to 500 MHz. The high power, high gain and broadband performanceof these devices makes possible solid state

N-CHANNEL BROADBAND RF POWER FETs

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance

Silicon Complementary Transistors High Voltage, Medium Power Switch

Description: The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–speed switching and linear amplifier applications for high–voltage operational amplifiers, switching regulators, converters, inverters, deflection stages, and high fidelity amplifiers. Fea

L-Band PA DRIVER AMPLIFIER

DESCRIPTION µPG175TA is a GaAs MMIC for PA driver amplifier with variable gain function which was developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. FEATURES • Low Operation Voltage: