SILICON EPITAXIAL PIN DIODE(VHF-UHF BAND RF ATTENUATOR APPLICATION, AGC FOR AM/FM TUNER)

VHF~UHF BAND RF ATTENUATOR APPLICATION. AGC FOR AM/FM TUNER. FEATURES • Low Capacitance : CT=0.25[pF] (Typ.) • Low Series Resistance : rs=7[Ω] (Typ.) • Designed for Low Inter Modulation.

SILICON EPITAXIAL PIN DIODE

VHF~UHF BAND RF ATTENUATOR APPLICATION.\nAGC FOR AM/FM TUNER.

USM PACKAGE

文件：349.79 Kbytes Page：1 Pages

USM PACKAGE

文件：349.79 Kbytes Page：1 Pages

P-channel silicon field-effect transistors

DESCRIPTION Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended for application with analog switches, choppers, commutators etc. A special feature is the interchangeability of the drain and source connections.

N-CHANNEL MOS BROADBAND RF POWER FET

. . . designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.0 dB Efficiency = 50 (Min) • Excellent Thermal Stability, Ideally Suited For Class AOperati

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DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

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