SILICON EPITAXIAL PLANAR DIODE

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : ESC. • Low Forward Voltage. • Fast Reverse Recovery Time. • Small Total capacitance. • Suffix U : Qualified to AEC-Q101. ex) KDS4148E-RTK/HU

SILICON EPITAXIAL PLANAR DIODE

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Low Forward Voltage. • Fast Reverse Recovery Time. • Small Total capacitance. • Suffix U : Qualified to AEC-Q101. ex) KDS4148S-RTK/HU

SILICON EPITAXIAL PLANAR DIODE

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : USC. • Low Forward Voltage. • Fast Reverse Recovery Time. • Small Total capacitance.

40V N-Channel PowerTrench MOSFET

Features ● 12.5 A, 40 V. RDS(ON) = 9m @ VGS = 10 V ● Low gate charge (45 nC typical) ● High performance trench technology for extremely low RDS(ON) ● High power and current handling capability

Complementary PowerTrench Half-Bridge MOSFET

Features ● N-Channel 9.3 A, 30 V RDS(ON) = 18m @ VGS = 10 V RDS(ON) = 23m @ VGS =4.5V ● P-Channel -5.6 A, -20 V RDS(ON) = 46 m @ VGS =- 4.5 V RDS(ON) = 63 m @ VGS =-2.5V

60V Complementary PowerTrench MOSFET

Features ● N-Channel 4.5 A, 60 V RDS(ON) = 55m @ VGS = 10 V RDS(ON) = 75m @ VGS =4.5V ● P-Channel -3.5 A, -60 V RDS(ON) = 105 m @ VGS =- 10 V RDS(ON) = 135 m @ VGS =-4.5V

Dual 30V P-Channel PowerTrench MOSFET

Features ● -5 A, -30 V. RDS(ON) = 55m @ VGS = -10V RDS(ON) = 95m @ VGS =-4.5V ● Low gate charge(6nC typical) ● High performance trench technology for extremely low RDS(ON) ● High power and current handling capability ● Fast switching speed

Small Signal Switching Diode, USC, 75V, 450mA

USC PACKAGE

文件：349.87 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：45.18 Kbytes Page：2 Pages

USC PACKAGE

文件：349.87 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：45.18 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：584.52 Kbytes Page：2 Pages

N-MOSFETs

N+P MOSFETs