N-Channel UltraFET Trench MOSFET

Features ● RDS(ON) = 0.040 (Typ.), VGS = 10V ● Qg(TOT) = 29nC (Typ.), VGS = 10V ● Low QRR Body Diode ● Maximized efficiency at high frequencies ● UIS Rated

N-MOSFETs

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

N-Channel PowerTrench MOSFET 150V, 29A, 54m?

Features • rDS(ON) = 45mΩ (Typ.), VGS = 10V, ID = 9A • Qg(tot) = 26nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC converters and Off-Line UPS • Distributed Power Architectures

Silicon NPN Transistor High Current Switch

Features: • Low Collector Emitter Saturation Voltage • High Current Capacity Applications: • Relay Drivers • High Speed Inverters • Converters

150V, 0.047 Ohms, 4.9A, N-Channel UltraFET Trench MOSFET

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Negative Output Flyback Pulse Width Modulator

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