SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : SOT-23. • Low Forward Voltag : VF=0.92V(Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=2.2pF(Typ.).

Small Signal Switching Diode, SOT-23, 80V, 300mA

• Low Forward Voltag : VF=0.92V(typ.)\n• Fast Reverse Recovery Time : trr=1.6nS(typ.)\n• Small Total Capacitance : CT=2.2pF(typ.)\n• Small Package : SOT-23.;

SOT-23 PACKAGE

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SOT-23 PACKAGE

文件：349.98 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

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Stainless steel plastic hub dispensing needles

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包装：散装 描述：DISPENSER NEEDLE TIP 18GA 50PC 工具 点胶设备 - 尖头，喷嘴

包装：盒 描述：DISPENSER NEEDLE TIP 18GA 1000PC 工具 点胶设备 - 尖头，喷嘴

整流二极管

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,