SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : USM. • Low Forward Voltage : VF=0.9V (Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF (Typ.).

Small Signal Switching Diode, USM, 80V, 300mA

• Low Forward Voltage : VF=0.9V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS (typ.)\n• Small Total Capacitance : CT=0.9pF (typ.)\n• all Package : USM.;

USM PACKAGE

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USM PACKAGE

文件：349.49 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

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COMPLEMENTARY SILICON POWER DARLINGTONS

Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular TIP122 and T

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

Precision Timers

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Precision Timers

文件：281.35 Kbytes Page：14 Pages