SILICON EPITAXIAL PLANAR DIODE (ULTRA HIGH SPEED SWITCHING)

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : USM. • Low Forward Voltage : VF=0.9V (Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF (Typ.)

Small Signal Switching Diode, USM, 80V, 300mA

• Low Forward Voltage : VF=0.9V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS (typ.)\n• Small Total Capacitance : CT=0.9pF (typ.)\n• Small Package : USM.;

USM PACKAGE

文件：349.57 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Small Package : ESM. • Low Forward Voltage : VF=0.9V (Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF (Typ.). • Suffix U : Qualified to AEC-Q101. ex) KDS121E-RTK/HU

Small Signal Switching Diode, ESM, 80V, 300mA

• Low Forward Voltage : VF=0.9V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS (typ.)\n• Small Package : ESM.;

Small Signal Switching Diode, VSM, 80V, 300mA

• Low Forward Voltage : VF=0.9V (typ.)\n• Fast Reverse Recovery Time : trr=1.6nS (typ.)\n• Small Total Capacitance : CT=0.9pF (typ.)\n• Small Package : VSM.;

VSM PACKAGE

ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES • Very Small Package : VSM. • Low Forward Voltage : VF=0.9V (Typ.). • Fast Reverse Recovery Time : trr=1.6ns(Typ.). • Small Total Capacitance : CT=0.9pF (Typ.). • Suffix U : Qualified to AEC-Q101. ex) KDS121V-RTK/HU

USM PACKAGE

文件：349.57 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：528.27 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：447.13 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：447.13 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：357.14 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：358.33 Kbytes Page：2 Pages

Recording Writer for MSSI121

Description The MSSI121/241/241B is an one time programmable CMOS VLSI ASIC that can memorize voice for 7-12 / 13-24 seconds using 6-bit MOSEL qualified coding method (MPCM). Most of the necessary circuit are built in like oscillator, ROM, DAC and interface logic. Versatile functions can be perfo

Germanium PNP Transistor Audio Frequency Power Amplifier

Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier.

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar type For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board