SILICON EPITAXIAL PLANAR DIODE (VHF TUNER BAND SWITCH APPLICATIONS)

VHF TUNER BAND SWITCH APPLICATIONS. FEATURES • Small Package. • Small Total Capacitance : CT=1.2pF(Max.). • Low Series Resistance : rS=0.5Ω (Typ.).

Small Signal Band Switching Diode, USC, 35V, 100mA

• Small Package\n• Small Total Capacitance\n• Low Series Resistance\n• VHF Tuner band switch application;

VHF/UHF Variable Capacitance Diode

USM PACKAGE

文件：349.59 Kbytes Page：1 Pages

VHF TUNER BAND SWITCH APPLICATIONS

VHF TUNER BAND SWITCH APPLICATIONS. FEATURES • Small Package. • Small Total Capacitance : CT=1.2pF(Max.). • Low Series Resistance : rS=0.5Ω (Typ.). • Suffix U : Qualified to AEC-Q101. ex) KDS114E-RTK/HU

Small Signal Band Switching Diode, ESC, 35V, 100mA

• Small Package\n• Small Total Capacitance\n• Low Series Resistance\n• VHF Tuner band switch application;

Switching Diode Silicon

Features • Small total capacitance:CT=1.3Pf(Max) • Low series resistance: rf≤0.6Ω • package：SOD-523 Application • Tuner Band Switch

VSC PACKAGE

VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ·Small Package. ·Small Total Capacitance : CT=1.2pF(Max.). ·Low Series Resistance : rS=0.5Ω(Typ.).

SILICON EPITAXIAL PLANAR DIODE

Features • Small package • Small total capacitance • Low series resistance Applications • VHF tuner band switch

丝印代码：W7；SILICON EPITAXIAL PLANAR DIODE

Features • Small package • Small total capacitance • Low series resistance Applications • VHF tuner band switch

USM PACKAGE

文件：349.59 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：37.77 Kbytes Page：2 Pages

ESC PACKAGE

文件：25.12 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：75.72 Kbytes Page：2 Pages

ESC PACKAGE

文件：25.12 Kbytes Page：1 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：75.72 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：352.28 Kbytes Page：2 Pages

SILICON EPITAXIAL PLANAR DIODE

文件：352.79 Kbytes Page：2 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its xternal resistor bias network. The BRT eliminate

CASE 463-01, STYLE 1 SOT-416/SC-90

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminat

CASE 463-01, STYLE 1 SOT-416/SC-90

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital trans

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff