DTA114YE晶体管资料
DTA114YE别名:DTA114YE三极管、DTA114YE晶体管、DTA114YE晶体三极管
DTA114YE生产厂家:
DTA114YE制作材料:Si-P+R
DTA114YE性质:表面帖装型 (SMD)
DTA114YE封装形式:贴片封装
DTA114YE极限工作电压:50V
DTA114YE最大电流允许值:0.1A
DTA114YE最大工作频率:<1MHZ或未知
DTA114YE引脚数:3
DTA114YE最大耗散功率:0.3W
DTA114YE放大倍数:
DTA114YE图片代号:H-15
DTA114YEvtest:50
DTA114YEhtest:999900
- DTA114YEatest:0.1
DTA114YEwtest:0.3
DTA114YE代换 DTA114YE用什么型号代替:RN2107,UN9114,
DTA114YE价格
参考价格:¥0.0967
型号:DTA114YEBTL 品牌:Rohm Semiconductor 备注:这里有DTA114YE多少钱,2026年最近7天走势,今日出价,今日竞价,DTA114YE批发/采购报价,DTA114YE行情走势销售排行榜,DTA114YE报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DTA114YE | Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its xternal resistor bias network. The BRT eliminate | MOTOROLA 摩托罗拉 | ||
DTA114YE | 丝印代码:54;Digital transistors (built-in resistors) Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing | ROHM 罗姆 | ||
DTA114YE | Digital transistors (built-in resistors) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantag | JIANGSU 长电科技 | ||
DTA114YE | PNP Digital Transistors (Built-in Resistors) FEATURES ● Built-in bias resistors enable the configuration of an inverter circuit without connecting input resistors (see equivalent circuit). ● Only the on/off conditions need to be set for operation, making device design easy. ● The bias resistors consist of thin-film resistors with complete | SECOS 喜可士 | ||
DTA114YE | Digital transistors (built-in resistors) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit) 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the advantage | TGS | ||
DTA114YE | TRANSISTOR(PNP) FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.They also have the | HTSEMI 金誉半导体 | ||
DTA114YE | Bias Resistor Transistor PNP Silicon Bias Resistor Transistor PNP Silicon P/b Lead(Pb)-Free | WEITRON | ||
DTA114YE | 丝印代码:54;PNP -100mA -50V Digital Transistor Digital transistors (built-in resistors) | ROHM 罗姆 | ||
DTA114YE | PNP Digital Transistor Features ● Green compound (Halogen free) with suffix G on packing code and prefix G on date code. ● Only the on/off conditions need to be set for operation,marking device design easy. ● Built-in bias resistors enable the configuration of an inverter circuit without connecting external input res | TSC 台湾半导体 | ||
DTA114YE | PNP Bipolar Digital Transistor (BRT) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT el • Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable\n• These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant; | ONSEMI 安森美半导体 | ||
DTA114YE | PNP Digital Transistors 文件:156.82 Kbytes Page:2 Pages | SECOS 喜可士 | ||
DTA114YE | PNP -100mA -50V Digital Transistor 文件:1.9983 Mbytes Page:13 Pages | ROHM 罗姆 | ||
DTA114YE | 丝印代码:54;PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) 文件:1.54574 Mbytes Page:11 Pages | ROHM 罗姆 | ||
DTA114YE | Digital Transistors (BRT) R1 = 10 k, R2 = 47 k 文件:147.21 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | ||
DTA114YE | Digital Transistors (BRT) 文件:184.02 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | ||
DTA114YE | 丝印代码:54;-100mA / -50V Digital transistors (with built-in resistors) 文件:147.36 Kbytes Page:3 Pages | ROHM 罗姆 | ||
丝印代码:54;PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) Features 1) Built-In Biasing Resistors, R1 = 10kΩ, R2 = 47kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e | ROHM 罗姆 | |||
PNP, SOT-416, R1≠R2 车载数字晶体管(内置偏置电阻的晶体管) DTA114YE3HZG是一款车规级高可靠性数字晶体管。 • Built-In Biasing Resistors, R1 = 10kΩ, R2 = 47kΩ\n• Built-in bias resistors enable the configuration of\nan inverter circuit without connecting external\ninput resistors (see inner circuit).\n• Only the on/off conditions need to be set for operation, making the circuit design easy.\n• Complementar; | ROHM 罗姆 | |||
Digital transistor(with built-in resistors) 罗姆开发了数字晶体管的标准产品。 • Built-In Biasing Resistors, R1 = 10kΩ, R2 = 47kΩ\n• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) .\n• Only the on/off conditions need to be set for operation, making the circuit design easy.\n• Complementary; | ROHM 罗姆 | |||
丝印代码:54;-100mA / -50V Digital transistors Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing | ROHM 罗姆 | |||
丝印代码:54;PNP -100mA -50V Digital Transistor Digital transistors (built-in resistors) | ROHM 罗姆 | |||
PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol | ONSEMI 安森美半导体 | |||
Bias Resistor Transistor Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol | ONSEMI 安森美半导体 | |||
PNP Digital Transistors 文件:156.82 Kbytes Page:2 Pages | SECOS 喜可士 | |||
-100mA / -50V Digital transistors (with built-in resistors) 文件:147.36 Kbytes Page:3 Pages | ROHM 罗姆 | |||
丝印代码:54;PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) 文件:1.54574 Mbytes Page:11 Pages | ROHM 罗姆 | |||
丝印代码:54;PNP -100mA -50V Digital Transistor 文件:1.9983 Mbytes Page:13 Pages | ROHM 罗姆 | |||
PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) 文件:1.06382 Mbytes Page:8 Pages | ROHM 罗姆 | |||
封装/外壳:SC-89,SOT-490 包装:剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 100MA 50V SOT-416FL 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ROHM 罗姆 | |||
封装/外壳:SC-89,SOT-490 包装:卷带(TR) 描述:TRANS PREBIAS PNP 0.15W EMT3 分立半导体产品 晶体管 - 双极(BJT)- 单,预偏置 | ROHM 罗姆 | |||
丝印代码:54;PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) 文件:1.0598 Mbytes Page:8 Pages | ROHM 罗姆 | |||
Bias Resistor Transistors 文件:108.32 Kbytes Page:13 Pages | ONSEMI 安森美半导体 | |||
Bias Resistor Transistors 文件:108.32 Kbytes Page:13 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) 文件:184.02 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
PNP Transistors with Monolithic Bias Resistor Network 文件:148.04 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
Digital Transistors (BRT) R1 = 10 k, R2 = 47 k 文件:147.21 Kbytes Page:12 Pages | ONSEMI 安森美半导体 | |||
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) 文件:1.54574 Mbytes Page:11 Pages | ROHM 罗姆 | |||
PNP SILICON BIAS RESISTOR TRANSISTOR This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The | ONSEMI 安森美半导体 | |||
CASE 463-01, STYLE 1 SOT-416/SC-90 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminat | MOTOROLA 摩托罗拉 | |||
CASE 463-01, STYLE 1 SOT-416/SC-90 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital trans | MOTOROLA 摩托罗拉 | |||
0.25關m Sea of Gates and Customer Structured Arrays DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 |
DTA114YE产品属性
- 类型
描述
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Polarity:
PNP
- IC Continuous (A):
0.1
- V(BR)CEO Min (V):
50
- hFE Min:
80
- R1 (kΩ):
10
- R2 (kΩ):
47
- R1/R2 Typ:
0.213
- Vi(off) Max (V):
0.5
- Vi(on) Min (V):
1.4
- Package Type:
SC-75-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
22+ |
SOT-523 |
8000 |
原装正品支持实单 |
|||
ON/安森美 |
2019+ |
SOT323 |
36000 |
原盒原包装 可BOM配套 |
|||
长晶 |
2023 |
SOT-523 |
120000 |
||||
ROHM/罗姆 |
2447 |
SOT-423 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Rohm(罗姆) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ROHM |
26+ |
原厂封装 |
9896 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
ON/安森美 |
SMD |
23+ |
6000 |
专业配单原装正品假一罚十 |
|||
ROHM |
26+ |
SOT23 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
ROHM |
24+ |
SOD523 |
90000 |
郑重承诺只做原装进口现货 |
|||
ROHM/罗姆 |
2023+ |
SOT523 |
1790 |
原厂全新正品旗舰店优势现货 |
DTA114YE规格书下载地址
DTA114YE参数引脚图相关
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- d触发器
- DTA143Y
- DTA143X
- DTA143T
- DTA143E
- DTA143
- DTA12-Y
- DTA125T
- DTA124X
- DTA124T
- DTA124G
- DTA124E
- DTA124
- DTA123Y
- DTA123J
- DTA123EU(A)
- DTA123EE
- DTA123EC,EK(A)
- DTA123E(A,F,L,S,V)
- DTA123E
- DTA115UU(A)
- DTA115UE
- DTA115UC,UK(A)
- DTA115U(A,F,L,S,V)
- DTA115U
- DTA115TU(A)
- DTA115TE
- DTA115TC,TK(A)
- DTA115T(A,F,L,S,V)
- DTA115T
- DTA115GU(A)
- DTA115GE
- DTA115GC,GK(A)
- DTA115G(A,F,L,S,V)
- DTA115G
- DTA115EU(A)
- DTA115EE
- DTA115EC,EK(A)
- DTA115E(A,F,L,S,V)
- DTA115E
- DTA115
- DTA114YC,YK(A)
- DTA114Y(A,F,L,S,V)
- DTA114Y
- DTA114WU(A)
- DTA114WE
- DTA114WC,WK(A)
- DTA114W(A,F,L,S,V)
- DTA114W
- DTA114TU(A)
- DTA114TC,TK(A)
- DTA114T(A,F,L,S,V)
- DTA114T
- DTA114GU(A)
- DTA114GE
- DTA114GC,GK(A)
- DTA114G(A,F,L,S,V)
- DTA114G
- DTA114EU(A)
- DTA114EE
- DTA114EC,EK(A)
- DTA114E(A,F,L,S,V)
- DTA114E
- DTA113ZU(A)
- DTA113ZE
- DTA113ZC,ZK(A)
- DTA113Z
- DTA113T
- DTA113
- DTA08E
- DTA-080
- DTA08
- DTA-070
- DTA05E
- DTA05C
- DTA05B
- DTA05
- DTA044T
- DTA044E
- DTA043Z
- DTA043X
DTA114YE数据表相关新闻
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2021-9-17DT74FCT162244ATPF-缓冲器/驱动器
描述: 该FCT162244T16位缓冲器/线路驱动器,是用于总线接口或信号缓冲适用于需要高速和低功耗。这些通过引脚器件有一个组织流程,简化和收缩包装电路板布局。所有输入的设计与改进的噪声容限的滞后。三态控制允许独立的4位,8位或联合16位运作。这些部分在哪里更换插头54/74ABT16244更高的速度,更低的噪音和低功耗水平的需要。该FCT162244T有平衡输出电流水平和电流限制电阻。这些具有低接地反弹,最小冲和控制输出下降时间,从而降低了外部串联电阻器的需要而终止还提供了对小于200pF负载非常高的速度运行。 特点: •
2013-3-5
DdatasheetPDF页码索引
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