Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Glass passivated junction - Ideal for printed circuit board - High case dielectric strength - Typical IR less than 0.1μA - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free a

SINGLE PHASE 8.0 AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES * Ideal for printed circuit board * Reliable low cost construction * Plastic material has Underwriters Laboratory flammability classifications 94V.O * Surge overload rating 200 amperes peak.

Voltage 50V ~ 1000V 8.0Amp Glass Passivited Bridge Rectifiers

FEATURES • Surge overload rating -175 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has Underwriters Laboratory • Mounting postition:Any • Mounting torgue:5 In.Ib.Max

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features ● Glass Passivated Die Construction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

GLASS PASSIVATED BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts FORWARD CURRENT - 4 / 6 / 8 Amperes FEATURES ● Surge overload rating -125~175 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL ● Mounting postition:A

GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES ● Surge overload rating -175 amperes peak ● Ideal for printed circuit board ● Reliable low cost construction utilizing molded plastic technique ● Plastic material has UL ● Mounting postition:Any ● Mounting torgue:5 In.Ib.Max

8.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER

Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards Recognized File # E157705

封装/外壳：4-SIP，KBU 包装：卷带（TR） 描述：DIODE BRIDGE 8A 50V KBU 分立半导体产品 二极管 - 桥式整流器

Glass Passivated Bridge Rectifiers

文件：416.43 Kbytes Page：3 Pages

8.0A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

文件：52.8 Kbytes Page：4 Pages

8A, 50V, Standard Bridge Rectifier

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：167.22 Kbytes Page：2 Pages

Single Phase 8.0AMPS. Glass Passivated Bridge Rectifiers

文件：189.25 Kbytes Page：2 Pages

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：522.09 Kbytes Page：2 Pages

Single Phase 8.0 AMPS Glass Passivated Bridge Rectifiers

文件：171.69 Kbytes Page：2 Pages

Glass Passivated Bridge Rectifiers

文件：192.23 Kbytes Page：4 Pages

Glass Passivated Bridge Rectifier

Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High surge current capability * Ideal for printed circuit boards

封装/外壳：4-SIP，KBU 包装：管件 描述：BRIDGE RECT 1PHASE 50V 8A KBU 分立半导体产品 二极管 - 桥式整流器

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：167.22 Kbytes Page：2 Pages

Single Phase 8.0 AMPS Glass Passivated Bridge Rectifiers

文件：171.69 Kbytes Page：2 Pages

Single Phase 8.0 AMPS. Glass Passivated Bridge Rectifiers

文件：522.09 Kbytes Page：2 Pages

Single Phase 8.0AMPS. Glass Passivated Bridge Rectifiers

文件：189.25 Kbytes Page：2 Pages

Glass Passivated Bridge Rectifiers

文件：192.23 Kbytes Page：4 Pages

Glass Passivated Bridge Rectifier

Plastic High Power Silicon NPN Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD801 is complementary with BD 798, 800, 802

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

Integrated Circuit FM Stereo Demodulator

Description: The NTE801 is a monolithic device in a 14–Lead DIP type package designed for use in solid–state stereo receivers. Features: Requires No Inductors Low External Part Count Only Oscillator Frequency Adjustment Necessary Integral Stereo/Monaural Switch 75mA Lamp Drivin

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead