2.0A BRIDGE RECTIFIERS

2.0A BRIDGE RECTIFIERS

Single Phase 2.0 AMPS. Silicon Bridge Rectifiers

Features ◇ UL Recognized File # E-96005 ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction technique results in inexpensive product ◇ High temperature soldering guaranteed: 260 ℃ / 10 seconds at 5 lbs. ( 2.3 Kg ) tension ◇ Small size, simple instal

GLASS PASSIVATED BRIDGE RECTIFIERS

FEATURES • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has UL flammability classification 94V-0 • In compliance with EU RoHS 2002/95/EC directives

CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts

Features • Glass Passivated Die Construction • High Case Dielectric Strength of 1500VRMS • Low Reverse Leakage Current • Surge Overload Rating to 65A Peak • Ideal for Printed Circuit Board Applications • Plastic Material - UL Flammability Classification 94V-0

Single Phase 2.0AMP. Silicon Bridge Rectifiers

Features ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction technique results in inexpensive product ◇ High temperature soldering guaranteed: 260 ℃ / 10 seconds at 5 lbs. ( 2.3 Kg ) tension ◇ Small size, simple installation

BRIDGE RECTIFIERS

FEATURES · Reliable low cost construction utilizing molded plastic technique · Ideal for printed circuit board · Low forward voltage drop · Low reverse leakage current · High surge current capability · UL Recognized File # E469616

BRIDGE RECTIFIERS

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2.0A BRIDGE RECTIFIER

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封装/外壳：4-SIP，KBP 包装：盒 描述：BRIDGE RECT 1PHASE 200V 2A KBP 分立半导体产品 二极管 - 桥式整流器

桥式整流器

2.0A BRIDGE RECTIFIER

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability ● Ideal for Printed Circuit Boards

2.0 AMP GLASS PASSIVATED BRIDGE RECTIFIER KBP PACKAGE

FEATURES * Ideal for printed circuit board * Surge overload rating: 55 Amperes peak * Mounting position: Any * Weight: Approximated 1.5 grams * RoHS product for packing code suffix G Halogen free product for packing code suffix H * Moisture Sensitivity Level 1

Silicon Bridge Rectifier

Features • Ideal for printed circuit board • Plastic material has Underwriters Laboratory Flammability Classification 94V-0 • Built-in printed circuit board stand-offs • High temperature soldering guaranteed 265°C/ 10 seconds • High case dielectric strength • Types from 50 V to 400 V VRRM •

SINGLE PHASE SILICON BRIDGE RECTIFIER

FEATURES ● Ideal for printed circuit board ● Surge overload rating: 60A peak ● High case dielectric strength ● High temperature soldering guaranteed: 260°C/10 seconds at 5lbs. (2.3kg) tension

Single Phase 2.0AMP. Glass Passivatec Bridge Rectifiers

Features ◇ Glass passivated junction ◇ Ideal for printed circuit board ◇ Reliable low cost construction technique results in inexpensive product ◇ High temperature soldering guaranteed: 260°C / 10 seconds at 5 lbs. ( 2.3 Kg ) tension ◇ Small size, simple installation

Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A

Features • Low reverse leakage • High forward surge capability • 60 A Surge overload rating: 60 Amperes peak • Lead and body according with RoHS standard

Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers?

Single Phase 2.0 AMPS. Glass Passivated Bridge Rectifiers

FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2

Single Phase 2.0 AMPS Glass Passivated Bridge Rectifiers

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Single Phase 2.0 AMPS Glass Passivated Bridge Rectifiers

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Glass Passivated Bridge Rectifiers

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Single-phase Silicon Bridge Rectifier

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Single Phase Glass Passivated Silicon Bridge Rectifier

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Bridge Rectifiers

封装/外壳：4-SIP，KBP 包装：管件 描述：BRIDGE RECT 1PHASE 200V 2A KBP 分立半导体产品 二极管 - 桥式整流器

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.