位置：首页 > IC中文资料第899页 > K9F1G08
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K9F1G08 | 1Gb NAND Flash Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed | Samsung 三星 |   | |
K9F1G08 | FLASH MEMORY GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | |
K9F1G08 | 1Gb E-die NAND Flash 文件：436.52 Kbytes Page：38 Pages | Samsung 三星 | | |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | ||
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | ||
128M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope | Samsung 三星 | | ||
128M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope | Samsung 三星 | | ||
1Gb NAND Flash Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed | Samsung 三星 | | ||
1Gb NAND Flash Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed | Samsung 三星 | | ||
1Gb NAND Flash Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed | Samsung 三星 | | ||
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | ||
128M x 8 Bit NAND Flash Memory | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory 文件：1.00801 Mbytes Page：37 Pages | Samsung 三星 | | ||
NAND Flash Memory | Samsung 三星 | | ||
USB 2.0 high-speed Flash drive controller 文件：614.48 Kbytes Page：32 Pages | STMICROELECTRONICS 意法半导体 | | ||
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory 文件：1.00801 Mbytes Page：37 Pages | Samsung 三星 | | ||
Samsung Semiconductor, Inc. Product Selection Guide 文件：973.79 Kbytes Page：36 Pages | Samsung 三星 | | ||
1Gb E-die NAND Flash 文件：436.52 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | |
K9F1G08产品属性
- 类型
描述
- 型号
K9F1G08
- 制造商
Samsung Semiconductor
- 功能描述
1GB SLC NORMAL X8 FBGA - Trays
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG(三星) |
25+ |
- |
7589 |
全新原装现货,支持排单订货,可含税开票 |
|||
SAM |
24+ |
BGA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG/三星 |
25+ |
TSOP48 |
32000 |
SAMSUNG/三星全新特价K9F1G08U0D-SIB0即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
25+ |
BGA |
7899 |
原厂直接发货进口原装 |
|||
SAMSUNG |
24+ |
BGA |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SAMSUNG/三星 |
25+ |
TSOP48 |
13800 |
原装,请咨询 |
|||
SAMSUNG |
2025+ |
TSOP |
3783 |
全新原装、公司现货热卖 |
|||
SAMSUNG |
24+ |
FBGA |
25480 |
专营三星DDR内存闪存原装进口现货 |
|||
SAMSUNG/三星 |
22+ |
TSOP48 |
9600 |
||||
SAMSUNG |
21+ |
TSOP-48 |
9486 |
全新原装SAMSUNG内存全系列现货,假一赔十,公司为一般纳税人可开17%增值税票,0755-8279777813692179527张小姐期待你的来电!! |
K9F1G08规格书下载地址
K9F1G08参数引脚图相关
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- K9F1G08U0B-PIB0000
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- K9F1G08Q0M-PCB0
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- K9F1216U0A-Y
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- K9F1208U0C-PIB0T00
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K9F1G08数据表相关新闻
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2021-9-14K9F5608U0C-YCB0 TSOP48 SAMSUNG/三星 内存 闪存 原装现货
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2021-5-20K9F1208R0C-JIB0
https://hch01.114ic.com/
2020-11-13K9F4G08UOB-PCBO
K9F4G08UOB-PCBO，当天发货0755-82732291全新原装现货或门市自取.
2020-9-24K9F5608R0D-JIB0T00
IS45S16160D-75ETLA1 ISSI TSOP-54 2017+ 49500 K4B2G1646F-BCK0T00 SAMSUNG FBGA-96 2018+ 40000 K4B4G0846E-BCMAT00 SAMSUNG FBGA-78 2018+ 50000 K4B8G0846D-MYK0000 SAMSUNG FBGA-78 2018+ 8090 K4M51323PI-HG75000 SAMSUNG FBGA-90 2012+ 300000 EDS1232AASE-75-E ELPIDA FBGA-90 2008+ 78482 FMS6416LBH-75EER
2019-12-10K9F1208U0C-PCB0
深圳市博瑞威电子有限公司 可开13%发票，价格优势后期可月结，QQ加2965210490 ，手机号码13560731313，期待您的来电，期待与您合作。
2019-5-13
DdatasheetPDF页码索引
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