位置：首页 > IC中文资料第5793页 > K9F1G08U0M
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
K9F1G08U0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 |   | |
K9F1G08U0M | 1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | |
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | ||
128M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope | Samsung 三星 | | ||
128M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope | Samsung 三星 | | ||
1Gb NAND Flash Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed | Samsung 三星 | | ||
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory 文件：1.00801 Mbytes Page：37 Pages | Samsung 三星 | |
K9F1G08U0M产品属性
- 类型
描述
- 型号
K9F1G08U0M
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
128M x 8 Bit/64M x 16 Bit NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
3270 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG |
2016+ |
TSOP |
2500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG |
存储器 |
TSOP |
42027 |
SAMSUNG存储芯片K9F1G08U0M-YCB0即刻询购立享优惠#长期有货 |
|||
SAMSUNG/三星 |
25+ |
TSOP48 |
996880 |
只做原装,欢迎来电资询 |
|||
SAMSUNG |
1443+ |
TSSOP |
86 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG/三星 |
21+ |
TSSOP |
3000 |
十年专营,原装现货,假一赔十 |
|||
SAMSUNG/三星 |
24+ |
TSOP |
40000 |
全新原装现货特价销售,欢迎来电查询 |
|||
SAMSUNG |
6000 |
面议 |
19 |
TSOP |
|||
SAMSUNG |
24+ |
TSOP48 |
6210 |
绝对原装现货,价格低,欢迎询购! |
|||
SAM |
23+ |
NA |
1234 |
专做原装正品,假一罚百! |
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K9F1G08U0M规格书下载地址
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K9F1G08U0M数据表相关新闻
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深圳市博瑞威电子有限公司 可开13%发票，价格优势后期可月结，QQ加2965210490 ，手机号码13560731313，期待您的来电，期待与您合作。
2019-5-13
DdatasheetPDF页码索引
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