位置：首页 > IC中文资料第5793页 > K9F1G08U0M
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K9F1G08U0M | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 |   | |
K9F1G08U0M | 128M x 8 Bit NAND Flash Memory | Samsung 三星 | | |
K9F1G08U0M | 1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | |
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
1Gb Gb 1.8V NAND Flash Errata 文件：713.91 Kbytes Page：38 Pages | Samsung 三星 | | ||
FLASH MEMORY GENERAL DESCRIPTION Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112-byte(X8 device) or 1056-w | Samsung 三星 | | ||
128M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope | Samsung 三星 | | ||
128M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION Offered in 128Mx8bit, the K9F1G08U0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64)Byte page and an erase ope | Samsung 三星 | | ||
1Gb NAND Flash Offered in 128Mx8bit, the K9F1G08X0D is a 1G-bit NAND Flash Memorywith spare 32M-bit. Its NAND cell provides the most cost effective solution for the solid state application market. A program operation can be performed intypical 250µson the (2K+64)Byte page and an erase operation can be performed | Samsung 三星 | | ||
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory 文件：1.00801 Mbytes Page：37 Pages | Samsung 三星 | |
K9F1G08U0M产品属性
- 类型
描述
- 型号
K9F1G08U0M
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
128M x 8 Bit/64M x 16 Bit NAND Flash Memory
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
SAMSUNG |
存储器 |
TSOP |
42027 |
SAMSUNG存储芯片K9F1G08U0M-YCB0即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
2025+ |
TSOP |
3615 |
全新原厂原装产品、公司现货销售 |
|||
SAMSUNG |
25+23+ |
TSSOP |
27127 |
绝对原装正品全新进口深圳现货 |
|||
SAM |
23+ |
TSSOP |
89630 |
当天发货全新原装现货 |
|||
SAMSUNG/三星 |
23+ |
TSOP |
5000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
SAMSUNG/三星 |
2447 |
TSOP-48 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SAMSUNG |
1923+ |
TSOP |
9865 |
原装进口现货库存专业工厂研究所配单供货 |
|||
SAMSUNG |
23+ |
O-NEW |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
SAMSUNG |
2023+ |
TSOP |
5800 |
进口原装,现货热卖 |
K9F1G08U0M规格书下载地址
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2019-5-13
DdatasheetPDF页码索引
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