TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 0.8 Ω(typ.) • High forward transfer admittance: ⎪Yfs⎪= 4.0 S (typ.) • Low leakage current: IDSS= 10 μA (max) (VDS= 600 V) • Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

LEADED (THRU-HOLE) General Purpose Rectifiers, 1 to 8 Amps

LEADED (THRU-HOLE) General Purpose Rectifiers, 1 to 8 Amps

CURRENT 8.0 Amperes VOLTAGE 50 TO 100 VOLTS

Features • The plastic package carries Underwrites Laboratory Flammability Classification 94V-0 • High forward current capability • High surge current capability • Construction utilizes void-free molded plastic technique • High temperature soldering guaranteed : 250℃ /10 seconds, 0.375(9.5mm)

Plastic Silicon Rectifiers

Features ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

Plastic Silicon Rectifiers

Features ◇ Low cost ◇ Diffused junction ◇ Low leakage ◇ Low forward voltage drop ◇ High current capability ◇ Easily cleaned witn Freon,Alcohol,lsopropanol and similar solvents ◇ The plastic material carries U/L recognition 94V-0

Trench MOS Barrier Schottky Rectifier

文件：819.95 Kbytes Page：3 Pages