位置：首页 > IC中文资料第6086页 > K6X4008
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 |   | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 bit Low Power full CMOS Static RAM 文件：177.23 Kbytes Page：9 Pages | Samsung 三星 | |
K6X4008产品属性
- 类型
描述
- 型号
K6X4008
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Kx8 bit Low Power full CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
2023+ |
TSOP |
50000 |
原装现货 |
|||
SAMSUNG |
23+24 |
TSOP- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
SAMSUNG |
22+ |
TSOP |
20000 |
公司只做原装 品质保障 |
|||
SAMSUNG |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SAMSUNG/三星 |
23+ |
TSOP32 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SAMSUNG |
23+ |
TSOP |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
SAMSUNG/三星 |
20+ |
TSOP |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
SAMSUNG |
23+ |
TSOP |
870 |
全新原装正品现货,支持订货 |
|||
SAMSUNG |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
SAMSUNG |
0628+/0619+ |
TSOP |
870 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
K6X4008规格书下载地址
K6X4008参数引脚图相关
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2019-11-15
DdatasheetPDF页码索引
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