位置：首页 > IC中文资料第6479页 > K6X4008T1F
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6X4008T1F | 512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 |   | |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The K6X4008T1F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support various operating temperature range and have various package types for user flexibility of system design. The families also support low data retention voltage for ba | Samsung 三星 | | ||
512Kx8 bit Low Power and Low Voltage CMOS Static RAM | Samsung 三星 | |
K6X4008T1F产品属性
- 类型
描述
- 型号
K6X4008T1F
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG(三星) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
SAMSUNG |
2016+ |
SOP32 |
4000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG |
23+ |
TSOP32 |
20000 |
全新原装假一赔十 |
|||
SAMSUNG/三星 |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG |
06+ |
TSOP |
2610 |
||||
SAMSUNG/三星 |
25+ |
TSOP32 |
54658 |
百分百原装现货 实单必成 |
|||
SAMSUNG/三星 |
22+ |
TSOP32 |
100000 |
代理渠道/只做原装/可含税 |
|||
SAMSUNG |
24+ |
TSOP |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
SAMSUNG |
0634+ |
TSOP32 |
376 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
K6X4008T1F芯片相关品牌
K6X4008T1F规格书下载地址
K6X4008T1F参数引脚图相关
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- K6X4008C1F-Q
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K6X4008T1F数据表相关新闻
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K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
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K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3 ，全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
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