位置：首页 > IC中文资料第5631页 > K6T1008
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 |   | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batter | Samsung 三星 | | ||
128K x8 bit Low Power CMOS Static RAM | Samsung 三星 | | ||
128Kx8 bit Low Power CMOS Static RAM | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | | ||
128K x8 bit Low Power and Low Voltage CMOS Static RAM 文件：149.49 Kbytes Page：11 Pages | Samsung 三星 | |
K6T1008产品属性
- 类型
描述
- 型号
K6T1008
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
128K x8 bit Low Power CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
3843 |
原装现货,当天可交货,原型号开票 |
|||
SAMSUNG |
2016+ |
SMD |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
SAMSUNG/三星 |
22+ |
SOP-32 |
100000 |
代理渠道/只做原装/可含税 |
|||
SAMSUNG |
12+ |
SOP |
34 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SAMSUNG/三星 |
20+ |
TSSOP32 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
SAMSUNG |
SMD |
800 |
正品原装--自家现货-实单可谈 |
||||
SAMSUNG |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
Samsung |
25+ |
120 |
公司优势库存 热卖中!! |
||||
CYPRESS |
25+ |
SOP-28 |
30000 |
代理全新原装现货,价格优势 |
|||
SAMSUNG/三星 |
25+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
K6T1008芯片相关品牌
K6T1008规格书下载地址
K6T1008参数引脚图相关
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- K700103
- K700102
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- K70_V04
- K70_V03
- K70_V02
- K70_V01
- K6T1008C2C-RF70
- K6T1008C2C-RB70
- K6T1008C2C-RB55
- K6T1008C2C-P
- K6T1008C2C-L
- K6T1008C2C-GP70
- K6T1008C2C-GL70
- K6T1008C2C-GL55
- K6T1008C2C-GF70
- K6T1008C2C-GF55000
- K6T1008C2C-GB70
- K6T1008C2C-GB55
- K6T1008C2C-F
- K6T1008C2C-DL70
- K6T1008C2C-DL55
- K6T1008C2C-DB70000
- K6T1008C2C-DB70
- K6T1008C2C-DB55
- K6T1008C2C-B
- K6T1008C2C
- K6T0808V1D-TD70
- K6T0808V1D-GB70
- K6T0808C1D-TP70
- K6T0808C1D-TL70
- K6T0808C1D-TL55
- K6T0808C1D-TF70
- K6T0808C1D-TB70
- K6T0808C1D-TB55
- K6T0808C1D-RP70
- K6T0808C1D-RL70
- K6T0808C1D-RL55
- K6T0808C1D-RF70
- K6T0808C1D-RB55
- K6T0808C1D-P
- K6T0808C1D-L
- K6T0808C1D-GP70
- K6T0808C1DGL70T00
- K6T0808C1D-GL70
- K6T0808C1D-GL55
- K6T0808C1D-GF70
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6T1008数据表相关新闻
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K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3 ，全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
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