型号 功能描述 生产厂家 企业 LOGO 操作
K6T1008C2E

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E

128Kx8 bit Low Power CMOS Static RAM

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batter

SAMSUNG

三星

128Kx8 bit Low Power CMOS Static RAM

SAMSUNG

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

SAMSUNG

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

SAMSUNG

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

SAMSUNG

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

SAMSUNG

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

SAMSUNG

三星

K6T1008C2E产品属性

  • 类型

    描述

  • 型号

    K6T1008C2E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Kx8 bit Low Power CMOS Static RAM

更新时间:2026-1-28 14:53:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG
25+
DIP32
90000
一级代理商进口原装现货、价格合理
2023+
5800
进口原装,现货热卖
SAMSUNG
23+
DIP32
8650
受权代理!全新原装现货特价热卖!
SAMSUNG
1923+
TSOP
2000
自己库存原装正品特价出售
SAMSUNG(三星)
25+
N/A
12421
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG(三星)
25+
N/A
12421
原装正品现货,原厂订货,可支持含税原型号开票。
SAMSUNG
24+
DIP-32
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
SAMSUNG/三星
25+
TSOP-32
12496
SAMSUNG/三星原装正品K6T1008C2E-TF70即刻询购立享优惠#长期有货
SAMSUNG
22+
TQFP
5000
全新原装现货!自家库存!
SAMSUNG
22+
TSSOP
8000
原装正品支持实单

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