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位置：首页 > IC中文资料第12841页 > K6T1008C2E

型号 功能描述 生产厂家 企业 LOGO 操作
K6T1008C2E

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E

128Kx8 bit Low Power CMOS Static RAM

SAMSUNG

三星

K6T1008C2E-B

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-DB55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-DB70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-DL55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-DL70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-F

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GB55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GB70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GF55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GF70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GL55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GL70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GP55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-GP70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-L

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-P

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-RB55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-RB70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-RF55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-RF70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-TB55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-TB70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-TF55

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-TF70

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

SAMSUNG

三星

K6T1008C2E-TF70T00

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batter

SAMSUNG

三星

K6T1008C2E-TF70T00

128Kx8 bit Low Power CMOS Static RAM

SAMSUNG

三星

K6T1008C2C

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

SAMSUNG

三星

K6T1008C2C-L

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

SAMSUNG

三星

K6T1008C2E产品属性

  • 类型

    描述

  • 型号

    K6T1008C2E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Kx8 bit Low Power CMOS Static RAM

K6T1008C2E供应商更多...

更新时间：2026-3-16 15:54:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市欧立现代科技有限公司
K6T1008C2E-GF70
SAMSUNG
24+
SOP32
8100
绝对原装现货,价格低,欢迎询购!
询价
深圳市赛美科科技有限公司
K6T1008C2E-6B70
SAMSUNG
TSOP
3350
一级代理 原装正品假一罚十价格优势长期供货
询价
齐创科技(上海,北京,青岛)有限公司
K6T1008C2E-6F70
SAMSUNG
23+
DIP8
5000
原装正品,假一罚十
询价
深圳市凌旭科技有限公司
K6T1008C2E-DC55
SAMSUNG
2016+
TSSOP
6000
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市一线半导体有限公司
K6T1008C2E-DB70
SAMSUNG
24+
DIP
3500
询价
深圳市昊创电子有限公司
K6T1008C2E-GB55
SAMSUNG/三星
2021+
TSOP32
9450
原装现货。
询价
深圳市高捷芯城科技有限公司
K6T1008C2E-GB55
SAMSUNG(三星)
25+
N/A
12421
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市宇集芯电子有限公司
K6T1008C2E-DB55
SAMSUNG
25+
DIP32
90000
一级代理商进口原装现货、价格合理
询价
标准国际(香港)有限公司
K6T1008C2E-DB55
Samsung
25+
2
公司优势库存 热卖中!!
询价
深圳市纳艾斯科技有限公司
K6T1008C2E-DB55
SAMSUNG
24+
DIP-32
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价

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K6T1008C2E规格书下载地址

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