型号 功能描述 生产厂家 企业 LOGO 操作
K6T1008C2E

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

K6T1008C2E

128Kx8 bit Low Power CMOS Static RAM

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batter

Samsung

三星

128Kx8 bit Low Power CMOS Static RAM

Samsung

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

Samsung

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

Samsung

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

Samsung

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

Samsung

三星

128K x8 bit Low Power CMOS Static RAM

GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt

Samsung

三星

K6T1008C2E产品属性

  • 类型

    描述

  • 型号

    K6T1008C2E

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    128Kx8 bit Low Power CMOS Static RAM

更新时间:2025-11-24 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SAMSUNG/三星
22+
SOP-32
100000
代理渠道/只做原装/可含税
SAMSUNG/三星
24+
NA/
3500
原装现货,当天可交货,原型号开票
SAMSUNG/三星
25+
SOP32
54815
百分百原装现货,实单必成,欢迎询价
SANSUNG
24+
SOP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
SAMSUNG/三星
25+
TSOP-32
12496
SAMSUNG/三星原装正品K6T1008C2E-TF70即刻询购立享优惠#长期有货
ATMEL
0725+
TSOP
1300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SAMSUNG/三星
2450+
SOP
8850
只做原装正品假一赔十为客户做到零风险!!
SAMSUNG
25+
标准封装
18000
原厂直接发货进口原装
SAMSUNG
23+
NA
1085
专做原装正品,假一罚百!
SAMSUNG
24+
SOP32
17300
一级分销商,原装正品

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