位置:首页 > IC中文资料第12841页 > K6T1008C2E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
K6T1008C2E | 128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | ||
K6T1008C2E | 128Kx8 bit Low Power CMOS Static RAM | SAMSUNG 三星 | ||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batte | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batter | SAMSUNG 三星 | |||
128Kx8 bit Low Power CMOS Static RAM | SAMSUNG 三星 | |||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | SAMSUNG 三星 | |||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | SAMSUNG 三星 | |||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | SAMSUNG 三星 | |||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | SAMSUNG 三星 | |||
128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for batt | SAMSUNG 三星 |
K6T1008C2E产品属性
- 类型
描述
- 型号
K6T1008C2E
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
128Kx8 bit Low Power CMOS Static RAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG |
25+ |
DIP32 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
2023+ |
5800 |
进口原装,现货热卖 |
|||||
SAMSUNG |
23+ |
DIP32 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
SAMSUNG |
1923+ |
TSOP |
2000 |
自己库存原装正品特价出售 |
|||
SAMSUNG(三星) |
25+ |
N/A |
12421 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
SAMSUNG(三星) |
25+ |
N/A |
12421 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
SAMSUNG |
24+ |
DIP-32 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
SAMSUNG/三星 |
25+ |
TSOP-32 |
12496 |
SAMSUNG/三星原装正品K6T1008C2E-TF70即刻询购立享优惠#长期有货 |
|||
SAMSUNG |
22+ |
TQFP |
5000 |
全新原装现货!自家库存! |
|||
SAMSUNG |
22+ |
TSSOP |
8000 |
原装正品支持实单 |
K6T1008C2E规格书下载地址
K6T1008C2E参数引脚图相关
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- K700101
- K70_V04
- K70_V03
- K70_V02
- K70_V01
- K6T1008C2E-RB55
- K6T1008C2E-P
- K6T1008C2E-L
- K6T1008C2E-GP70
- K6T1008C2E-GP55
- K6T1008C2E-GL70
- K6T1008C2E-GL55
- K6T1008C2E-GF70
- K6T1008C2EGF70
- K6T1008C2E-GF55000
- K6T1008C2E-GB70T00
- K6T1008C2E-GB70000
- K6T1008C2E-GB70
- K6T1008C2E-GB55
- K6T1008C2E-F
- K6T1008C2E-DL70
- K6T1008C2E-DL55
- K6T1008C2E-DB70
- K6T1008C2E-DB55
- K6T1008C2E-B
- K6T1008C2C-TF70
- K6T1008C2CTF70
- K6T1008C2C-TB70
- K6T1008C2C-TB55
- K6T1008C2C-RF70
- K6T1008C2C-RB70
- K6T1008C2C-RB55
- K6T1008C2C-P
- K6T1008C2C-L
- K6T1008C2C-GP70
- K6T1008C2C-GL70
- K6T1008C2C-GL55
- K6T1008C2C-GF70
- K6T1008C2C-GF55000
- K6T1008C2C-GB70
- K6T1008C2C-GB55
- K6T1008C2C-F
- K6T1008C2C-DL70
- K6T1008C2C-DL55
- K6T1008C2C-DB70000
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6T1008C2E数据表相关新闻
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2020-10-20K6R1008C1D-UC15,K6R1008C1D-UI15,K6R1008V1B-TC10,K6R1008V1B-TC12,
K6R1008C1D-UC15,K6R1008C1D-UI15,K6R1008V1B-TC10,K6R1008V1B-TC12,
2020-2-24K6R4004C1C-JE12,K6R4004C1C-JE15,K6R4004C1C-JI10,K6R4004V1C-JI10,K6R4004C1B-TC,K6R4004V1C-JC10,K6R4004V1C-JC15,K6R4004V1C-JE10,K6R4004C1D-JE15,K6R4004CIC-TC
K6R4004C1C-JE12,K6R4004C1C-JE15,K6R4004C1C-JI10,K6R4004V1C-JI10,K6R4004C1B-TC,K6R4004V1C-JC10,K6R4004V1C-JC15,K6R4004V1C-JE10,K6R4004C1D-JE15,K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3 ,全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
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