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位置：首页 > IC中文资料第5816页 > K6R4008

型号 功能描述 生产厂家&企业 LOGO 操作
K6R4008C1D

512Kx8BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4008C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas524,288wordsby8bits.TheK6R4008C1Duses8commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-JC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-JC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-JC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-JI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-JI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-JI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-KC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-KC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-KC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-KI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-KI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-KI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-TC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-TC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-TC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-TI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-TI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-TI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-UC0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-UC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-UC10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-UI0810

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-UI10

1Mx4BitHighSpeedStaticRAM(5.0VOperating)

GENERALDESCRIPTION TheK6R4004C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas1,048,576wordsby4bits.TheK6R4004C1Duses4commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Thedeviceisfabrica

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-UI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-JC08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-JC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-JI08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-JI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-KC08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-KC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-KI08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-KI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-TC08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-TC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-TI08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-TI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-UC08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-UC10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-UI08

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1D-UI10

256Kx16BitHighSpeedStaticRAM(5.0VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

GENERALDESCRIPTION TheK6R4016C1Disa4,194,304-bithigh-speedStaticRandomAccessMemoryorganizedas262,144wordsby16bits.TheK6R4016C1Duses16commoninputandoutputlinesandhasanoutputenablepinwhichoperatesfasterthanaddressaccesstimeatreadcycle.Alsoitallowsthatl

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-C

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-C10

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-C12

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-C15

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-E

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-E10

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-E12

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-E15

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-I

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-I10

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-I12

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1C-I15

512Kx8BitHighSpeedStaticRAM(5VOperating).OperatedatExtendedandIndustrialTemperatureRanges.

文件：134.63 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D

1Mx4BitHighSpeedStaticRAM(3.3VOperating).OperatedatCommercialandIndustrialTemperatureRanges

文件：218.74 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-J

512Kx8BitHighSpeedStaticRAM(3.3VOperating).OperatedatCommercialandIndustrialTemperatureRanges.

文件：245.22 Kbytes Page：10 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008C1D-JC

1Mx4BitHighSpeedStaticRAM(3.3VOperating).OperatedatCommercialandIndustrialTemperatureRanges

文件：218.74 Kbytes Page：9 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1B

CMOSSRAM

文件：214.12 Kbytes Page：10 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1B-C10

CMOSSRAM

文件：214.12 Kbytes Page：10 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1B-C12

CMOSSRAM

文件：214.12 Kbytes Page：10 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung
K6R4008V1B-C15

CMOSSRAM

文件：214.12 Kbytes Page：10 Pages

SamsungSamsung semiconductor

三星三星半导体

Samsung

K6R4008产品属性

  • 类型

    描述

  • 型号

    K6R4008

  • 制造商

    SAMSUNG

  • 制造商全称

    Samsung semiconductor

  • 功能描述

    512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.

K6R4008供应商更多...

更新时间：2024-9-22 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市杰顺创科技有限公司
K6R4008V1D-UI10
SAMSUNG/三星
21+
TSOP44
5000
全新原装现货 价格优势
询价
深圳市科恒伟业电子有限公司
K6R4008V1D-UI10
SAMSUNG
2017+
TSOP44
6528
只做原装正品假一赔十!
询价
深圳市英卓尔科技有限公司
K6R4008V1D-UI10
SAMSUNG
20+
TSOP
2960
诚信交易大量库存现货
询价
瀚佳科技(深圳)有限公司
K6R4008V1D-UI10
SAM
19+
9850
公司原装现货/随时可以发货
询价
深圳市华斯顿科技有限公司
K6R4008V1D-UI10
SAMSUMG
22+23+
TSOP44
41189
绝对原装正品全新进口深圳现货
询价
深圳市振鑫微电子科技有限公司
K6R4008V1D-UI10
SAMSUNG(三星)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
深圳市凯斯宇科技有限公司
K6R4008V1D-UI10
SAMSUNG
2022
TSOP
5280
原厂原装正品,价格超越代理
询价
深圳宇航军工半导体有限公司
K6R4008V1D-UI10
SAMSANG
19+
TSOP44
256800
原厂代理渠道,每一颗芯片都可追溯原厂；
询价
深圳市恒创达实业有限公司
K6R4008V1D-UI10
SAMSUNG
17+
QFP
6200
100%原装正品现货
询价
深圳市锦喆鸿电子有限公司
K6R4008V1D-UI10
SAMSUNG
21+
QFP
12588
原装正品,自己库存 假一罚十
询价

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