位置：首页 > IC中文资料第5816页 > K6R4008
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
512Kx8 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4008C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 |   | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(5.0V Operating) GENERAL DESCRIPTION The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabrica | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. GENERAL DESCRIPTION The K6R4016C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 262,144 words by 16 bits. The K6R4016C1D uses 16 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows that l | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. 文件：134.63 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(5.0V Operating) | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 文件：218.74 Kbytes Page：9 Pages | Samsung 三星 | | ||
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. 文件：245.22 Kbytes Page：10 Pages | Samsung 三星 | | ||
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 文件：218.74 Kbytes Page：9 Pages | Samsung 三星 | | ||
CMOS SRAM 文件：214.12 Kbytes Page：10 Pages | Samsung 三星 | | ||
CMOS SRAM | Samsung 三星 | | ||
CMOS SRAM 文件：214.12 Kbytes Page：10 Pages | Samsung 三星 | |
K6R4008产品属性
- 类型
描述
- 型号
K6R4008
- 制造商
SAMSUNG
- 制造商全称
Samsung semiconductor
- 功能描述
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
23+ |
SOJ-36 |
50000 |
全新原装正品现货,支持订货 |
|||
SAMSUNG? |
24+ |
SOJ? |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
SAMSUNG(三星) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
SAMSUNG/三星 |
25+ |
SOJ36 |
54658 |
百分百原装现货 实单必成 |
|||
SAMSUNG |
2021+ |
SOJ36 |
6800 |
原厂原装,欢迎咨询 |
|||
SAMSUNG |
SOJ36 |
2000 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SAMSUNG/三星 |
23+ |
SOJ36 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
SAMSUNG/三星 |
21+ |
SOJ36 |
7500 |
只做原装所有货源可以追溯原厂 |
|||
SAMSUNG |
23+24 |
SOJ- |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
SAMSUNG |
1215+ |
SOJ36 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
K6R4008规格书下载地址
K6R4008参数引脚图相关
- l482
- l478
- l3g4200d
- l393
- l32
- l298n
- l298
- l297
- l295
- l293d
- l234
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- K7252M
- K7075P
- K7055
- K7045D2
- K7045D1
- K7045C
- K70150P
- K70100P
- K70100A
- K700107
- K700106
- K700105
- K700104
- K700103
- K700102
- K700101
- K70_V04
- K70_V03
- K70_V02
- K70_V01
- K6R4008C1D-JI0810
- K6R4008C1D-JC10
- K6R4008C1D-JC0810
- K6R4008C1D-JC
- K6R4008C1D-J
- K6R4008C1D
- K6R4008C1C-TI10000
- K6R4008C1C-JC12000
- K6R4008C1C-I15
- K6R4008C1C-I12
- K6R4008C1C-I10
- K6R4008C1C-I
- K6R4008C1C-E15
- K6R4008C1C-E12
- K6R4008C1C-E10
- K6R4008C1C-E
- K6R4008C1C-C15
- K6R4008C1C-C12
- K6R4008C1C-C10
- K6R4008C1C-C
- K6R4004V1D-KI10
- K6R4004V1D-KI08
- K6R4004V1D-KC10
- K6R4004V1D-KC08
- K6R4004V1D-JKCI
- K6R4004V1D-JI10
- K6R4004V1D-JI08
- K6R4004V1D-JC10
- K6R4004V1D-JC08
- K6R4004V1D-J
- K6R4004V1D
- K6R4004C1D-KI100810
- K6R4004C1D-KI10
- K6R4004C1D-KC10
- K6R4004C1D-KC0810
- K6R4004C1D-JI100810
- K6R4004C1D-JI10
- K6R4004C1D-JC10
- K6R4004C1D-JC0810
- K6R4004C1D-JC
- K6A65D
- K-683
- K-682
- K-681
- K-680
- K6283K
- K6268K
- K6265K
- K6264K
- K60-500
- K60-375
- K60-300
- K60-250
- K60-200
- K60-185
- K60-160
- K60-135
- K60-090
- K60-075
- K60-065
K6R4008数据表相关新闻
K7805-1000R3百分百原装，现货
K7805-1000R3百分百原装，现货
2024-9-18K521H12ACH-B050
K521H12ACH-B050 HYNIX 2020+ BGA K524G2GACJ-B050 SKHYNIX 2020+ BGA K521F57ACM-A060 HYNIX 2020+ BGA K524F2HACA-B050 SKHYNIX 2020+ BGA K521H12ACB-B060 HYNIX 2020+ BGA K524G2GACI-BO50 HYNIX 2020+ BGA K521F57ACC-B050000 HYNIX 2020+ BGA PM8018 HYNIX 2020 BGA PM8015 SKHYNIX 2020 BGA EMMC08G-W325 S
2021-5-26K6R4016C1D-UI10 静态存储器芯片 进口原装现货。
K6R4016C1D-UI10 进口原装现货。
2020-10-20K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
K6R1008C1D-UC15，K6R1008C1D-UI15，K6R1008V1B-TC10，K6R1008V1B-TC12，
2020-2-24K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
K6R4004C1C-JE12，K6R4004C1C-JE15，K6R4004C1C-JI10，K6R4004V1C-JI10，K6R4004C1B-TC，K6R4004V1C-JC10，K6R4004V1C-JC15，K6R4004V1C-JE10，K6R4004C1D-JE15，K6R4004CIC-TC
2020-1-1K7805-500R3
K7805-500R3 ，全新原装当天发货或门市自取0755-82732291.
2019-11-15
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
